Bauteile für die Funktechnik

TIP 36C STM Leistungstransistor, PNP, 100V, 25A, 125W, TO-247

N-Channel MOSFET, Casing TO-220, 100 Volt, 12.8 A, 180 MOhm. Function: RF Driver, RF Final. Used in: President Lincoln-2 , CRT SS9900.

N-Channel RF Power Mosfet Transistor • Vcbo: 12,5 Volt • Power: 100 Watt PEP • Casing: TO-3PN The ERF9530 is a drop-in replacement and upgrade for the ERF7530 and other TO-3PN package MOSFET transistors. • The ERF2030+ and ERF9530 are the updated and improved replacements for the discontinued ERF2030 and ERF7530 MOSFET RF power transistors. • The ERF2030+ and ERF9530 feature...

N-Channel MOSFET, 100 Volt, 9.2 Ampere, 60 Watt, Casing TO-220.

BF 199 HF-Bipolartransistor, NPN, 25V, 0,1A, 1W, TO-92

KNOB, Plastic, Gray, Inner Knob. Function: Volume/Mic-Gain/SWR/Fine. Used in: Midland 8001

Potentiometer 0092 Volume für CRT SS6900 / DX-5000

RD100HHF1 Transistor, 100 Watt, 30 MHZ, 12.5v, MITSUBISHI RD100HHF1-101

Mitsubishi RD70HUF2 - T1105 - 101 Transistor 70 Watt, 520 MHz, 12,5 Volt

Mitsubishi RD70HUF2 MOSFET Power Transistor, 175MHz, 530MHz, 70W

N-Channel Power MOSFET, Casing TO-220 Function: Q501, Final Transistor für Grant II

RM Italy RM3 HF-MosFet Leistungstransistor Mosfet RM3 wird in folgenden Verstärker verwendet: KL-60 KL-200 KL-200P KL-203 KL-203P KL-503