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N-Channel RF Power Mosfet Transistor • Vcbo: 12,5 Volt • Power: 100 Watt PEP • Casing: TO-3PN The ERF9530 is a drop-in replacement and upgrade for the ERF7530 and other TO-3PN package MOSFET transistors. • The ERF2030+ and ERF9530 are the updated and improved replacements for the discontinued ERF2030 and ERF7530 MOSFET RF power transistors. • The ERF2030+ and ERF9530 feature...

N-Channel MOSFET, 100 Volt, 9.2 Ampere, 60 Watt, Casing TO-220.

BF 199 HF-Bipolartransistor, NPN, 25V, 0,1A, 1W, TO-92

Mitsubishi RD70HUF2 - T1105 - 101 Transistor 70 Watt, 520 MHz, 12,5 Volt

N-Channel Power MOSFET, Casing TO-220 Function: Q501, Final Transistor für Grant II

RM Italy RM3 HF-MosFet Leistungstransistor Mosfet RM3 wird in folgenden Verstärker verwendet: KL-60 KL-200 KL-200P KL-203 KL-203P KL-503

RM Italy RM4 HF-MosFet Leistungstransistorr Mosfet RM4 wird in folgenden Verstärker als Treiber verwendet: KL-503 Driver

MRF 450A HF-Leistungstransistor Silizium-NPN-Transistor AM-L, 40V, 7,5A, PQ=50W(30MHz)

Silizium-NPN-Transistor, HF-L, 75V, 4A, PQ>6W(27MHz)

AM-L, 45V, 25A, PEP=250W 30MHz Transistor NPN, 45 Volt, 25 Ampere, 250 Watt PEP , Casing 2-1B1A. 2SC2879 Transistor, Silicon NPN Epitaxial Planar Type, Early Version 2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE) Specified 12.5V, 28MHz Characteristics Output Power : Po=100WPEP Power Gain : Gp=13dB Collector Efficiency : '7 C = 35% (Min.)...

Mitsubishi RD70HHF1 Original Endstufe bei President Jackson II und diversen anderen Funkgeräten. Technische Daten Frequenzbereich: max. 30 MHz Ausgangsleistung: max. 70 Watt PEP